Product Summary
The MRFE6S9125NR1 is designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 28 volt base station equipment.
Parametrics
MRFE6S9125NR1 absolute maximum ratings: (1)Drain-Source Voltage VDSS: -0.5, +66 Vdc; (2)Gate-Source Voltage VGS: -0.5, +12 Vdc; (3)Maximum Operation Voltage VDD: 32, +0 Vdc; (4)Storage Temperature Range Tstg: - 65 to +150 ℃; (5)Case Operating Temperature TC: 150 ℃; (6)Operating Junction Temperature (1,2) TJ: 225 ℃.
Features
MRFE6S9125NR1 features: (1)Characterized with Series Equivalent Large-Signal Impedance Parameters; (2)Internally Matched for Ease of Use; (3)Integrated ESD Protection; (4)225℃ Capable Plastic Package; (5)RoHS Compliant; (6)In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
MRFE6S9125NR1 |
Freescale Semiconductor |
Transistors RF MOSFET Power HV6E 125W |
Data Sheet |
|
|
|||||||||||||
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
MRFE6P3300HR3 |
Freescale Semiconductor |
Transistors RF MOSFET Power HV6 900MHZ 300W NI860ML |
Data Sheet |
|
|
|||||||||||||
MRFE6P3300HR5 |
Freescale Semiconductor |
Transistors RF MOSFET Power HV6 900MHZ 300W NI860ML |
Data Sheet |
Negotiable |
|
|||||||||||||
MRFE6P9220HR3 |
Freescale Semiconductor |
Transistors RF MOSFET Power HV6E 900MHZ 200W NI860ML |
Data Sheet |
|
|
|||||||||||||
MRFE6P9220HR5 |
Freescale Semiconductor |
Transistors RF MOSFET Power HV6E 900MHZ 200W NI860ML |
Data Sheet |
Negotiable |
|
|||||||||||||
MRFE6S8046GNR1 |
Freescale Semiconductor |
Transistors RF MOSFET Power HV6E 45W GSM |
Data Sheet |
|
|
|||||||||||||
MRFE6S8046NR1 |
Freescale Semiconductor |
Transistors RF MOSFET Power HV6E 45W GSM |
Data Sheet |
|
|