Product Summary
The FDMS2572 is an N-Channel UltraFET Trench MOSFET. It combines characteristics that enable benchmark efficiency in power conversion applications. Optimized for low rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters. The applications of the FDMS2572 include: Distributed Power Architectures and VRMs, Primary Switch for 24V and 48V Systems, High Voltage Synchronous Rectifier.
Parametrics
FDMS2572 absolute maximum ratings: (1)VDS Drain-Source Voltage: 150 V; (2)VGS Gate-Source Voltage: ±20 V; (3)ID Drain Current – Continuous: 4.5 A; – Pulsed: 30 A; (4)PD Power Dissipation for Single Operation: 2.8 W; (5)TJ, TSTG Operating and Storage Junction Temperature Range: –55 to +150 ℃.
Features
FDMS2572 features: (1)Max rDS(on) = 47mΩ at VGS = 10V, ID = 4.5A; (2)Typ Qg = 31nC at VGS = 10 V; (3)Low Miller Charge; (4)Optimized efficiency at high frequencies.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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FDMS2572 |
Fairchild Semiconductor |
MOSFET LOW_VOLTAGE |
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