Product Summary
The MJ15024G is a PowerBase power transistor designed for high power audio, disk head positioners and other linear applications.
Parametrics
MJ15024G absolute maximum ratings: (1)Collector.Emitter Voltage, VCEO, MJ15022: 200 Vdc; MJ15024: 250 Vdc; (2)Collector Base Voltage, MJ15022: 350Vdc; MJ15024, VCBO: 400 Vdc; (3)Emitter Base Voltage VEBO: 5 Vdc; (4)Collector Emitter Voltage VCEX: 400 Vdc; (5)Collector Current-Continuous: 16; Peak: IC: 30Adc; (6)Base Current . Continuous IB: 5 Adc; (7)Total Device Dissipation @ TC = 25℃: PD 250W; Derate above 25℃: 1.43W/℃; (8)Operating and Storage Junction Temperature Range TJ, Tstg: -65 to +200 ℃.
Features
MJ15024G features: (1)High Safe Operating Area (100% Tested) - 2 A @ 80 V; (2)High DC Current Gain - hFE = 15 (Min) @ IC = 8 Adc; (3)Pb-Free Packages are Available.
Diagrams
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![]() MJ15024G |
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![]() Transistors Bipolar (BJT) 16A 250V 250W NPN |
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![]() MJ15001 |
![]() ON Semiconductor |
![]() Transistors Bipolar (BJT) 15A 140V 200W NPN |
![]() Data Sheet |
![]() Negotiable |
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![]() MJ15001G |
![]() ON Semiconductor |
![]() Transistors Bipolar (BJT) 15A 140V 200W NPN |
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![]() MJ15002 |
![]() ON Semiconductor |
![]() Transistors Bipolar (BJT) 15A 140V 200W PNP |
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![]() Negotiable |
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![]() MJ15003 |
![]() ON Semiconductor |
![]() Transistors Bipolar (BJT) 20A 140V 250W NPN |
![]() Data Sheet |
![]() Negotiable |
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![]() MJ15003G |
![]() ON Semiconductor |
![]() Transistors Bipolar (BJT) 20A 140V 250W NPN |
![]() Data Sheet |
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![]() MJ15004G |
![]() ON Semiconductor |
![]() Transistors Bipolar (BJT) 20A 140V 250W PNP |
![]() Data Sheet |
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